dmn6068lk3 document number ds32057 rev 4 - 2 1 of 8 www.diodes.com may 2013 ? diodes incorporated dmn 6 0 68 l k3 60v n - channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = + 25 c 6 0v 68m ? @ v gs = 10v 8.5a 100m ? @ v gs = 4.5v 7.0a description this mosfet has been designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? motor control ? transformer driving switch ? dc- dc converters ? power m anagement f unctions ? uninterrupted power supply features and benefits ? 100% unclamped inductive switch (uis) test in production ? low on- resistance ? fast switching speed ? lead - free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? case: to252 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v - 0 (note 1) ? moisture sen sitivity: level 1 per j - std - 020 ? terminals connections: see diagram ? terminals: matte tin finish annealed over copper leadframe. solderable per mil - std - 202, method 208 ? weight: 0.33 grams (approximate) ordering information (note 4 ) product marking reel size (inches) tape width (mm) quantity per reel dmn 606 8 lk3 - 13 n 6 068 l 13 1 6 2,500 note: 1 . eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporated?s definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green? products are defined as those which contain < 900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http?//www.diodes.com/products/packages.html . marking information top view pin out - top view d s g equivalent circuit g s d d = manufacturer?s marking n6068l = product type marking code yyww = date code marking yy = year (ex: 09 = 2009) ww = week (01 - 52) yyww n6068l to252 - 3l green
dmn6068lk3 document number ds32057 rev 4 - 2 2 of 8 www.diodes.com may 2013 ? diodes incorporated dmn 6 0 68 l k3 maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 6 0 v gate - source voltage (note 5 ) v gs 20 v single pulsed avalanche energy (note 11) e as 37.5 mj single pulsed avalanche current (note 11) i as 5.0 a continuous drain current v gs = 10v (note 7 ) i d 8.5 a t a = 70 c ( note 7 ) 6.8 (note 6 ) 6 . 0 pulsed drain current v gs = 10v ( note 8 ) i dm 22.2 a continuous source current (body diode) ( note 7 ) i s 10. 2 a pulsed source current (body diode) ( note 8 ) i sm 22.2 a thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation linear derating factor (note 6 ) p d 4.1 2 3 3 w mw/ c (note 7 ) 8. 4 9 67.9 (note 9 ) 2.12 16.9 thermal resistance, junction to ambient (note 6 ) r ja 30.3 c/w (note 7 ) 14. 7 (note 9 ) 59.0 thermal resistance, junction to lead (note 10) r jl 3. 09 operating and storage temperature range t j , t stg - 55 to + 150 c notes: 5 . aec - q101 v gs maximum is 16v. 6 . for a device surface mounted on 50mm x 50mm x 1.6mm fr4 pcb with high coverage of single sided 2oz copper, in still air condi tions; the device is measured when operating in a steady - state condition. 7 . same as note 2, except the device is measured at t 10 sec. 8 . same as note 2, except the device is pulsed with d = 0.02 and pulse width 300 s. the pulse current is limited by the maximum junction temperature. 9 . for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single si ded 1oz copper, in still air conditions; the device is measured when operating in a steady - state condition. 10 . thermal resistance from junction to solder - point (at the end of the drain lead) . 11 . uis in production with l = 3.0mh, i as = 5.0a, r g = 25 , v dd = 50v, starting t j = 25c
dmn6068lk3 document number ds32057 rev 4 - 2 3 of 8 www.diodes.com may 2013 ? diodes incorporated dmn 6 0 68 l k3 thermal characteristics 100 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 60 1 10 100m 1 10 1 10 100m 1 10 t amb =25c 25mm x 25mm 1oz fr4 r ds(on) limited 100s 1ms 10ms 100ms 1s dc safe operating area i d drain current (a) v ds drain-source voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 50mm x 50mm 2oz fr4 25mm x 25mm 1oz fr4 derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 5 10 15 20 25 30 35 t amb =25c 25mm x 25mm 1oz fr4 transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 25mm x 25mm 1oz fr4 50mm x 50mm 2oz fr4 safe operating area single pulse t amb =25c pulse power dissipation pulse width (s) max power dissipation (w) d=0.1 d=0.05 single pulse d=0.2 d=0.5 t amb =25c 50mm x 50mm 2oz fr4 transient thermal impedance pulse width (s) thermal resistance (c/w) t amb =25c 50mm x 50mm 2oz fr4 100s 1ms 10ms 100ms 1s dc r ds(on) limited v ds drain-source voltage (v) i d drain current (a)
dmn6068lk3 document number ds32057 rev 4 - 2 4 of 8 www.diodes.com may 2013 ? diodes incorporated dmn 6 0 68 l k3 electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics drain - source breakdown voltage bv dss 6 0 ? ? v i d = 250 a, v gs = 0v zero gate voltage drain current i dss ? ? 0.5 a v ds = 6 0v, v gs = 0v gate - source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics gate threshold voltage v gs(th) 1 . 0 ? 3.0 v i d = 250 a, v ds = v gs static drain - source on - resistance (note 12) r ds (on) ? ? 0.0 68 ? v gs = 10v, i d = 12a 0. 1 00 v gs = 4.5v, i d = 6 a forward trans conductance (notes 12 & 1 3 ) g fs ? 19. 7 ? s v ds = 15v, i d = 12a diode forward voltage (note 12) v sd ? 0. 9 8 1.1 5 v i s = 12 a, v gs = 0v reverse recovery time (note 1 3 ) t rr 1 45 ? n s i s = 12 a, di/dt= 100a/ s reverse recovery charge (note 1 3 ) q rr ? 929 ? nc dynamic characteristics ( note 1 3 ) input capacitance c iss ? 502 ? pf v ds = 3 0 v, v gs = 0v f= 1mhz output capacitance c oss ? 45.7 ? pf reverse transfer capacitance c rss ? 27.1 ? pf total gate charge q g ? 5.55 ? nc v gs = 4.5v v ds = 30v i d = 12a total gate charge q g ? 10.3 ? nc v gs = 10v gate - source charge q gs ? 1.6 ? nc gate - drain charge q gd ? 3.5 ? nc turn - on delay time (note 1 4 ) t d(on) ? 3. 6 ? ns v dd = 30v , v gs = 10v i d = 1 2 a, r g ? 6.0 ? turn - on rise time (note 1 4 ) t r ? 10.8 ? ns turn - off delay time (note 1 4 ) t d(off) ? 1 1. 9 ? ns turn - off fall time (note 1 4 ) t f ? 8.7 ? ns notes: 12. measured under pulsed conditions. pulse width 300 s; duty cycle 2% 1 3 . for design aid only, not subject to production testing. 1 4 . switching characteristics are independent of operating junction temperatures.
dmn6068lk3 document number ds32057 rev 4 - 2 5 of 8 www.diodes.com may 2013 ? diodes incorporated dmn 6 0 68 l k3 typical characteristics 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 1 2 3 4 5 1e-3 0.01 0.1 1 10 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0.1 1 10 0.01 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 0.01 0.1 1 10 5v 4v 3.5v 10v 4.5v output characteristics t = 25c 3v v gs i d drain current (a) v ds drain-source voltage (v) 4.5v 3.5v 10v 4v 2v 2.5v 3v output characteristics t = 150c v gs i d drain current (a) v ds drain-source voltage (v) typical transfer characteristics v ds = 10v t = 25c t = 150c i d drain current (a) v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = 10v i d = 12a v gs( t h) v gs = v ds i d = 250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 5v 10v 3.5v 4v 3v on-resistance v drain current t = 25c 4.5v v gs r ds(on) drain-source on-resistance ( ? ) i d drain current (a) vgs = 0v t = 150c t = 25c source-drain diode forward voltage v sd source-drain voltage (v) i sd reverse drain current (a)
dmn6068lk3 document number ds32057 rev 4 - 2 6 of 8 www.diodes.com may 2013 ? diodes incorporated dmn 6 0 68 l k3 typical characteristics - continued 0.1 1 10 0 200 400 600 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) v ds - drain - source voltage (v) 0 2 4 6 8 10 0 2 4 6 8 10 v ds = 30v i d = 12a gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) v gs gate-source voltage (v) 10 20 30 40 100 1m 5 10 15 20 e as avalanche energy (mj) single-pulsed avalanche rating l inductor (h) i as avalanche current (a) starting t j = 25c
dmn6068lk3 document number ds32057 rev 4 - 2 7 of 8 www.diodes.com may 2013 ? diodes incorporated dmn 6 0 68 l k3 test circuits package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. c u r r e n t r e g u l a t o r c h a r g e gate charge test circuit s witching time test circuit basic gate charge waveform s witching time waveforms d . u . t 5 0 k 1 2 v s a m e a s d . u . t v g s v g s v ds v g q gs q gd q g v gs 90% 10% t (on) t (on) t d(on) t r t r t v d s d d v r d r g v d s i d i g d(of f) to252 dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 ? ? e ? ? 2.286 e 6.45 6.70 6.58 e1 4.32 ? ? h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 ? all dimensions in mm b3 e 2x b2 d l4 a c2 e a1 l l3 3x b a h a2 e1
dmn6068lk3 document number ds32057 rev 4 - 2 8 of 8 www.diodes.com may 2013 ? diodes incorporated dmn 6 0 68 l k3 suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. dimensions value (in mm) z 11.6 x1 1.5 x2 7.0 y1 2.5 y2 7.0 c 6.9 e1 2.3 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or s ystems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in signific ant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. cu stomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requiremen ts concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2013, diodes incorporated www.diodes.com x2 c z x1 y1 e1 y2
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